This is supplemental course information, designed to give you a fuller picture of the course and an expanded look at the topics covered. This is an unofficial document. The USC Course Catalog is the binding description of all university courses. Information such as books, materials covered, and the order of topics is subject to change. Please consult instructor for this semseter to get more upto date course information.
Catalog Data:
438L Processing for Microelectronics (3, Sp) Applications & electrical
Evaluation of selected processes used in electronic microfabrications;
Prerequisite: EE 338
Textbook(s)
1) Science & Engineering of Microelectronic Fabrication, 2nd. Ed. by Stephen A.
Campbell, Oxford University Press Publishing, 2001
2) Introduction to Microelectronics Fabrication (Vol. V Modular Series on Solid State Devices),
Richard C. Jeager, Addison - Wesley Publishing Company, 2002
Coordinator
Kian Kaviani, Senior Lecturer, Electrical Engineering
Topics
1. Silicon wafers, preparation, orientation, & defect characterization
2. Thermal oxidation of Silicon
3. Lithography, Introduction and various advanced patterning techniques.
4. Diffusion & Ion Implantation
5. Etching (Wet & Plasma)
6. Metallization
7. Clean room based microfabrication and laboratory techniques for IC processing.
8. Electrical characterizations of PN, Schottky diodes, IC resistors, Transmission
Line Measurements, MOS capacitors, & MOSFETs in a laboratory setting.
Course Objectives:
To introduce the theory as well as actual hands-on approach toward microfabrications
of integrated circuits. The interplay between the processing related defects and the resulting electrical malfunctioning of the fabricated devices are discussed and actually verified on the students fabricated microchips.
Course Outcomes:
The students will be able to:
1. Understand some of the material properties of Silicon & Gallium Arsenide.
2. Understand the basic theory behind thermal oxidation of Silicon and be able to design
an oxidation process. Furthermore, students should be able to relate the oxide-induced
defects in the MOSFET operations.
3. Understand the basic theory behind solid –state diffusion ion implantation and ability
to design a diffusion or implantation process to achieve the targeted sheet resistance.
Furthermore, students should be able to calculate the actual diffusion profile vs. the
designed process and analyze the deviation from the targeted structure.
4. Choose the right type of photolithography process for the applications in hand.
5. Understand the electronic behavior of the building blocks of integrated circuits, like IC
resistors, PN diodes, MOS capacitors, MOSFETs. Furthermore, students should be able
to detect any anomaly in the electronic behavior of the finished devices and be able to
assign some justifiable process-induced causes.
6. Write a lengthy technical report with lots of detail.
7. Interact with others in a group environment while maintaining the focus of each individual
project.
Laboratory Projects:
Weekly laboratory work on an individual basis for 12 weeks.
Prepared by: Kian Kaviani Date: April 02, 2002 
